Recent progress in parallel fabrication of individual single walled carbon nanotube devices using dielectrophoresis
Single walled carbon nanotubes (SWNTs) have attracted immense research interest because of their remarkable physical and electronic properties. In particular, electronic devices fabricated using individual SWNT have shown outstanding device performance surpassing those of Si. However, for the widespread application of SWNTs based electronic devices, parallel fabrication techniques along with Complementary Metal Oxide (CMOS) compatibility are required. One technique that has the potential to integrate SWNTs at the selected position of the circuit in a parallel fashion is AC dielectrophoresis (DEP). In this paper, we review recent progress in the parallel fabrication of SWNT-based devices using DEP. The review begins with a theoretical background for the DEP and then discusses various parameters affecting DEP assembly of SWNTs. We also review the electronic transport properties of the DEP assembled devices and show that high performance devices can be fabricated using DEP. The technique for fabricating all semiconducting field effect transistor using DEP is also reviewed. Finally, we discuss the challenges and opportunities for the DEP assembly of SWNTs.
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Document Type: Review Article
Publication date: 01 August 2014
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- Materials Express is a peer-reviewed multidisciplinary journal reporting emerging researches on materials science, engineering, technology and biology. Cutting-edge researches on the synthesis, characterization, properties, and applications of a very wide range of materials are covered for broad readership; from physical sciences to life sciences. In particular, the journal aims to report advanced materials with interesting electronic, magnetic, optical, mechanical and catalytic properties for industrial applications.
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