@article {Wang:2014:2158-5849:85,
title = "Performance enhancement in chemical vapor deposition graphene field-effect transistors by high- dielectric screening",
journal = "Materials Express",
parent_itemid = "infobike://asp/me",
publishercode ="asp",
year = "2014",
volume = "4",
number = "1",
publication date ="2014-02-01T00:00:00",
pages = "85-89",
itemtype = "ARTICLE",
issn = "2158-5849",
url = "https://www.ingentaconnect.com/content/asp/me/2014/00000004/00000001/art00010",
doi = "doi:10.1166/mex.2014.1146",
keyword = "GRAPHENE, SCREENING, CHEMICAL VAPOR DEPOSITION, RAMAN SPECTROSCOPY, HIGH-κ DIELECTRIC",
author = "Wang, Zegao and Chen, Yuanfu and Li, Pingjian and Liu, Jingbo and Tian, Hongjun and Qi, Fei and Zheng, Binjie and Zhou, Jinhao",
abstract = "The transport properties of CVD graphene-based field-effect transistors (GFETs) before and after introducing high- dimethyl sulfoxide (DMSO) were investigated. The results show that after introducing DMSO, the performance of GFETs was significantly improved: the maximum
drain current ID
max, the maximum transconductance gm
max, and the field-effect mobility increase by 2.5, 24, and 23 times, respectively. The mechanism for the performance enhancement by high- dielectric was analyzed by
Raman spectroscopy and transport measurements, and both are consistent with each other.",
}