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Performance enhancement in chemical vapor deposition graphene field-effect transistors by high-κ dielectric screening
The transport properties of CVD graphene-based field-effect transistors (GFETs) before and after introducing high-κ dimethyl sulfoxide (DMSO) were investigated. The results show that after introducing DMSO, the performance of GFETs was significantly improved: the maximum
drain current ID
max, the maximum transconductance gm
max, and the field-effect mobility increase by 2.5, 24, and 23 times, respectively. The mechanism for the performance enhancement by high-κ dielectric was analyzed by
Raman spectroscopy and transport measurements, and both are consistent with each other.
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Keywords: CHEMICAL VAPOR DEPOSITION; GRAPHENE; HIGH-κ DIELECTRIC; RAMAN SPECTROSCOPY; SCREENING
Document Type: Short Communication
Publication date: February 1, 2014
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