@article {Ho:2012:2158-5849:344,
title = "Optical and Electrical Properties of Wurtzite Copper Indium Sulfide Nanoflakes",
journal = "Materials Express",
parent_itemid = "infobike://asp/me",
publishercode ="asp",
year = "2012",
volume = "2",
number = "4",
publication date ="2012-12-01T00:00:00",
pages = "344-350",
itemtype = "ARTICLE",
issn = "2158-5849",
url = "https://www.ingentaconnect.com/content/asp/me/2012/00000002/00000004/art00010",
doi = "doi:10.1166/mex.2012.1091",
keyword = "HALL MEASUREMENT, WURTZITE, COPPER INDIUM SULFIDE (CUINS2), OPTICAL PROPERTIES, SOLVOTHERMAL SYNTHESIS",
author = "Ho, John C. W. and Batabyal, Sudip K. and Pramana, Stevin S. and Lum, Jiayi and Pham, Viet T. and Li, Dehui and Xiong, Qihua and Tok, Alfred I. Y. and Wong, Lydia H.",
abstract = "Raman spectroscopic analysis and Hall measurement of wurtzite copper indium sulfide (CuInS2) were carried out. Nanocrystalline wurtzite CuInS2 (CIS) was synthesized by a solvothermal reaction route for these studies. It is observed that the amount of sulfur source,
time and temperature of the reaction are the key to control wurtzite phase formation of CuInS2. Wurtzite nanoflakes were formed at 150 \textdegreeC, with ethylenediamine as the selected solvent and the ratio of Cu:In:S precursor was kept at 1.1:1:5. The Hall measurement resulted in sheet
resistivity, , of 2 \texttimes 105 /sq, Hall coefficient of 10 m2/C, mobility of 0.5 cm2/V-s and hole concentration of 7 \texttimes 1013/cm2. Slight shift in the Raman spectra of 12 cm1
was observed between wurtzite and roquesite CuInS2 and was attributed to the stoichiometric variation in Cu/In and/or changes in the chemical environments of the two crystal structures.",
}