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Open Access Complementary Metal Oxide Semiconductor Amplifier Behaviour Considering Different Points of Electromagnetic Interference Injection

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In this paper the CMOS amplifier behaviour has been further investigated respect to the previous works in the literature. An exhaustive scenario for the EMI pollution has been considered: the injected interferences can indeed directly reach the amplifier pins or can be coupled from the PCB ground. This is a key point for evaluating also the susceptibility from the EMI coupled to the output pin, which is disclosed as a critical point. The investigated topologies are basically derived from the Miller and the Folded Cascode, which are well-known and widely used by the CMOS analog designers; all of them are re-designed in UMC 180 nm CMOS process in order to have a fair comparison.

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Keywords: ANALOG INTEGRATED CIRCUITS; IMMUNITY TO ELECTROMAGNETIC INTERFERENCE; LOW POWER CMOS OPERATIONAL AMPLIFIERS

Document Type: Research Article

Publication date: December 1, 2019

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  • The electronic systems that can operate with very low power are of great technological interest. The growing research activity in the field of low power electronics requires a forum for rapid dissemination of important results: Journal of Low Power Electronics (JOLPE) is that international forum which offers scientists and engineers timely, peer-reviewed research in this field.
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