A Low-Voltage Low-Power Full-Wave Rectifier Based on Dynamic Threshold Voltage MOSFET
In this paper, a low-voltage and low-power dynamic threshold voltage Metal Oxide Semiconductor Field Effect Transistor (DTMOS) based current mode full-wave rectifier is presented. This presented rectifier contains only MOS transistors and avoids the use of a diode. Therefore, it is suitable for integrated circuit realization and occupies a low chip area. Furthermore, the power supply voltages are ±0.25 V and power consumption of full-wave rectifier is 83 nW and hence the presented full-wave rectifier based on DTMOS can be characterized by a low voltage and low power. In addition, the presented full-wave rectifier has high output impedances. DC analysis, temperature analysis, frequency dependent transfer (p DC) and RMS error (p RMS) analysis are given in order to indicate the performance of the circuit. The rectifier circuit is capable of operating at frequencies up to 1 MHz. The simulation results are given by using SPICE programming.
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Document Type: Research Article
Publication date: September 1, 2019
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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