Skip to main content
padlock icon - secure page this page is secure

Performance Analysis of Impact of Source/Drain Doping Gradients Well as Roll-Off Widths on Gate Induced Drain Leakage of Double Gate Metal Oxide Semiconductor Field Effect Transistor

Buy Article:

$106.73 + tax (Refund Policy)

This paper investigates the importance of overlap/underlap design of channel in Double Gate (DG) MOSFETs to improve Short Channel Effects (SCEs) and Gate Induced Drain Leakage (GIDL). A systematic study of GIDL is a very important analysis in DGMOSFET. Gate underlap architecture is useful to reduce the GIDL and improve the SCEs in DGMOSFET structure. The results show that steeper Source/Drain (S/D) doping gradients along with wider S/D roll-off width will be required for the device. In order to enhance short channel immunity, the ratio of S/D roll-off width to lateral straggle should be high for a wide range of S/D doping gradients. This research provides innovative solution for realizing opportunity of very low power devices as well as circuits through underlap DGMOSFETs.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
No Metrics


Document Type: Research Article

Publication date: November 1, 2018

More about this publication?
  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more