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Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.

Publisher: American Scientific Publishers

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Volume 13, Number 2, February 2018

Research Articles

Improved Photovoltaic Performance of CdS/CdSe Co-Sensitized Solar Cells by Using CuS/FeS Counter Electrodes
pp. 151-155(5)
Authors: Fang, Biaopeng; Lin, Yu; Zhang, Xiaolong; Zeng, Jiali; Wu, Jihuai

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Synthesis and Photocatalytic Activity of TiO2 Monodisperse Nanoparticles at Low Temperatures
pp. 156-162(7)
Authors: Mehrzad, Atiye; Khakpoor, Ali Asghar; Mortazavi, Sara; Rasooli, Mozhgan

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Back-Biased Undoped Nanowire-Based FETs in Silicon-On-Insulator Substrates with Nanometric Thicknesses
pp. 178-182(5)
Authors: Nemer, J. P.; Santos, M. V. Puydinger dos; Diniz, J. A.; Pavanello, M. A.

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Development of Electrodeposited ZnTe Thin Films in Non-Aqueous Medium
pp. 190-194(5)
Authors: Rajpal, Shashikant; Kumar, S. R.

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Optical and Recombination Losses in Cu2ZnSn(S,Se)4-Based Thin-Film Solar Cells with CdS, ZnSe, ZnS Window and ITO, ZnO Charge-Collecting Layers
pp. 195-207(13)
Authors: Dobrozhan, O. A.; Danylchenko, P. S.; Novgorodtsev, A. I.; Opanasyuk, A. S.

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An Analytical Approach to Model the Optical Properties of Carbon Nanotubes for Plasmonic Devices
pp. 208-213(6)
Authors: Rahmani, Meisam; Fard, Hassan Ghafoori; Ahmadi, Mohammad Taghi; Rahmani, Komeil

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High Performance ZnSnO Thin Film Transistor with ZrO2 Gate Insulator Formed by Atomic Layer Deposition
pp. 214-220(7)
Authors: Li, Jun; Huang, Chuan-Xin; Zhao, Cheng-Yu; Ding, Xingwei; Zhang, Jian-Hua; Jiang, Xue-Yin; Zhang, Zhi-Lin

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Comparative Performance Analysis of Nanometer Scale Double Gate MOSFETs
pp. 229-234(6)
Authors: Dhiman, Gaurav; Pourush, Rajeev; Ghosh, P. K.

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Reducing the Source Resistance of an HEMT Based on InAs0.3P0.7 by Increasing the Holes Concentration for THz Applications
pp. 235-239(5)
Authors: Soufiane, Derrouiche; Benyounes, Bouazza; Choukria, Sayah

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In Vitro Cytotoxicity of Magnetic Spinel Nanoferrites (CoMgFe2O4) Against HepG2 Cells
pp. 251-257(7)
Authors: Aziz, Muhammad Hammad; Fatima, Mahvish; Ali, Syed Mansoor; Atif, M.; Noreen, Zobia; Ahmad, Imran; Shaheen, Fozia; Ali, Akbar; Baig, M. R.; Ullah, Hafeez; Abbas, Ghazanfar; Alkhuraiji, Turki S.

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Analytical Modeling of Voltage to Time Conversion Circuit for Gas Sensing System and Some Experimental Studies
pp. 258-266(9)
Authors: Roy, Subhashis; Dey, Anup; Biswas, Bikram; Sarkar, Subir Kumar

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Modeling and Simulation of the Electronic Properties in Graphene Nanoribbons of Varying Widths and Lengths Using Tight-Binding Hamiltonian
pp. 289-300(12)
Authors: Goh, Edric; Chin, Huei Chaeng; Wong, Kien Liong; Indra, Izzat Safwan Bin; Tan, Michael Loong Peng

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