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Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.

Publisher: American Scientific Publishers

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Volume 12, Number 10, October 2017

Articles

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Design, Simulation and the Comparative Analysis of Carbon Nanotube Field Effect Transistors Based Multistage Operational Amplifiers
pp. 1045-1055(11)
Authors: Nizamuddin, M.; Loan, Sajad A; Alamoud, Abdulrahman M.; Alharbi, Abdullah G.

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Polyvinylidenefluoride (PVDF) Based Membranes for Waterproofing Applications
pp. 1056-1061(6)
Authors: Li, Shengbin; Hu, Bingxu; Zhang, Fan

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Research on Gas Sensing Properties of Orthorhombic Molybdenum Oxide Based Sensor to Hydrogen Sulfide
pp. 1072-1076(5)
Authors: Zhou, Qu; Zhang, Qingyan; Liu, Hongchen; Hong, Changxiang; Wu, Gaolin; Peng, Shudi; Wang, Qian; Wu, Dake

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Analyzing Porphine Based Molecular Junctions with Cu, Ag, Au Electrodes
pp. 1077-1083(7)
Authors: Kaur, Milanpreet; Nayyar, Payal; Vohra, Rajan; Sawhney, Ravinder Singh

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Carrier Mobility Enhancement of Symmetric Double Gate Junctionless Transistor
pp. 1084-1092(9)
Authors: Sarma, Kaushik Chandra Deva; Sharma, Santanu

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Application of Piezoelectric Ultrasonic Sensor in the Monitoring of Concrete Structure Strain
pp. 1093-1097(5)
Authors: Chai, Tingting; Li, Zhuowei; Qin, Jianmin

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A Special Section

A Special Section on Nanoelectronic Devices
pp. 1105-1107(3)
Authors: Lee, Sang-Kwon; Umar, Ahmad

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Articles

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Anisotropic Behavior of the Temperature-Dependent Thermal Conductivity in p-Type Bismuth Antimony Telluride (p-Bi0.5Sb1.5Te3) Thin Films
pp. 1123-1128(6)
Authors: Lee, Won-Yong; Park, No-Won; Ahn, Jay-Young; Umar, Ahmad; Lee, Sang-Kwon

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Structural and Optical Characteristics of Epitaxially Grown SiGe on Si for Electronic and Photonic Device Applications
pp. 1129-1133(5)
Authors: Yu, Eunseon; Ryu, Seung Wook; Radamson, Henry H.; Cho, Seongjae

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A Comparative Study of Vertical and Horizontal p-Type InN Nanowires Grown by MOCVD for an Optoelectronic Application
pp. 1141-1145(5)
Authors: Park, Ji-Hyeon; Chatterjee, Uddipta; Jang, Taek-Soo; Dae-Young Um; Kang, San; Seo, Inseok; Lee, Cheul-Ro

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The Density Functional Implementation of Hybrid Graphene Devices Stringed to C20 Fullerene
pp. 1146-1153(8)
Authors: Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

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Fabrication and Temperature Dependent Electrical Characterization of n-ZnO Nanowires/p-Si Substrate Heterojunction Diodes
pp. 1162-1166(5)
Authors: Algarni, H.; Badran, R. I.; Khan, M. Ajmal; Hassen, Fredj; Kim, S. H.; Umar, Ahmad

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Annealing Dependence of Negative Bias Temperature Instability (NBTI) in 4H-SiC MOSFETs
pp. 1167-1171(5)
Authors: Koo, Sang-Mo; Jung, Se-Woong; Moon, Kyoung-Sook; Lee, Sang-Kwon; Kim, So-Mang

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