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Excitonic Energy Calculations and Modelling in Artificial Intelligent Nanostructures

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Based on the theoretical and computational methods of artificial intelligent nanostructures and exciton correlation, in this paper, we have studied the exciton energy characteristics in quantum wires and dots. The separation variable method is used to deal with InAs/InP one-dimensional quantum line physical model. The numerical relationship between exciton binding energy and quantum wire growth height in quantum wires is studied. Then, the Hartley self-consistent field equation approximation is used to obtain the self-consistent calculation results through the iterative algorithm successive approximation. The numerical relationship between exciton energy and quantum dot shape in quantum dots is analyzed. The results show that with the increase of the height of the InAs/InP quantum wires, the ground state energy of the exciton binding energy decreases. And the energy of excitons in cylindrical quantum dots decreases with the increase of height.
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Document Type: Research Article

Publication date: August 1, 2017

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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