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Home / Journal of Nanoelectronics and Optoelectronics, Volume 12, Number 1
Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.

Publisher: American Scientific Publishers

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Volume 12, Number 1, January 2017

Research Articles

Considerations for Ultra-Low-Power VLSI Design—A Survey
pp. 1-21(21)
Authors: Sharma, Anjali; Sohal, Harsh

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Fabrication and Characterization of P3HT:MR:PCBM Blend Based Organic Phototransistor
pp. 22-27(6)
Authors: Tauqeer, T.; Yasin, Muhammad; San, Sait E.; Ur Rahman, Hamood; Karimov, KH. S.

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Contrast in the Electrical and Opto-Electrical Properties Exhibited by Randomly Distributed Networks and Vertically Aligned Mutil-Wall Carbon Nanotubes
pp. 28-32(5)
Authors: Torres-Torres, C.; Mercado-Zúñiga, C.; Santos-Fernández, A. M.; Martínez-González, C. L.; Trejo-Valdez, M.; Martínez-Gutiérrez, H.; Vargas-García, J. R.; Torres-Martínez, R.

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Operation of Optocouplers Under the Influence of Extreme Environmental Conditions
pp. 33-41(9)
Authors: Abd El-Basit, W.; Hassan, W. H. A.; Kamh, S. A.; Soliman, F. A. S.

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Sensitivity Enhancement of Photonic Crystal Waveguide Based Sensor Using Ring Shaped Holes
pp. 42-46(5)
Authors: Chopra, Harshita; Kaler, R. S.; Painam, Balveer

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Memristive Crossbar Circuits-Based Combinational Logic Classification Using Single Layer Perceptron Learning Rule
pp. 47-58(12)
Authors: Khalid, Muhammad; Singh, Jawar

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Performance Analysis of Modified Source and Tunnel Diode Body Contact Based Fully-Depleted Silicon-on-Insulator MOSFET for Low Power Digital Applications
pp. 59-66(8)
Authors: Mishra, Vimal Kumar; Chauhan, R. K.

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Influence of Image Force Effect on Tunneling Current Density for High-k Material ZrO2 Ultra Thin Films Based MOS Devices
pp. 67-71(5)
Authors: Maity, N. P.; Maity, Reshmi; Baishya, S.

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Characterization of Flicker Noise in Dual Material Gate Silicon Nanowire Transistors
pp. 72-75(4)
Authors: Anandan, P.; Saranya, V.; Mohankumar, N.

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Fabrication of Blue Light-Emitting Diode with Vertical Structure on the ZnO Substrate
pp. 76-79(4)
Authors: Qiao, Liang; He, Miao; Zheng, Shuwen; Li, Shuti

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An Accurate Current Model for III–V Field Effect Transistors Using a Novel Concept of Effective Transmission Coefficient
pp. 80-84(5)
Authors: Rahman, Ehsanur; Shadman, Abir; Biswas, Sudipta Romen; Datta, Kanak; Khosru, Quazi D. M.

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A Study of Dielectric Reliability of Anodic TiO2 Based Single and Double Layer Metal-Insulator-Metal Capacitors
pp. 85-88(4)
Authors: Karthik, R.; Tummala, Vijetha; Singh, Vikram

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