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Electrolyte Gating on Oxygen-Deficient VO2 Thin Films

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Effects of electrolyte gating on metal–insulator transitions of oxygen-deficient VO2 films were examined. The oxygen-deficient VO2 films deposited under reduced oxygen pressure showed a reduction in the metal–insulator transition temperature and stabilization of the metallic phase at room temperature as confirmed by electrical transport, X-ray diffraction, and Raman scattering spectroscopy measurements. Electrolyte-gating experiments for the oxygen-deficient VO2 films revealed that the application of a positive gate voltage (V G) stabilized the metallic state in the films. On the other hand, application of a negative V G down to –1.6 V induced no change in the transport properties of the films even at the lowest temperature. This result supports the proton-migration mechanism for the electrolyte-gating-induced metallic state in VO2.
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Keywords: ELECTROLYTE GATING; FIELD-EFFECT TRANSISTOR; OXYGEN VACANCY; VANADIUM DIOXIDE

Document Type: Research Article

Publication date: October 1, 2016

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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