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Controlled Zr Doping to Obtain Better Electrical Properties for Solution-Processed ZTO TFTs

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This study examined the effect of Zr doping on solution-processed zinc-tin oxide (ZTO) thin-film transistors (TFTs). Unlike previous reports, the electrical properties of Zr-doped ZTO (Zr-ZTO) TFTs was improved by doping the ZTO semiconductor thin film with a very small amount of Zr. A comparison with an un-doped solution-processed ZTO TFT revealed; increases in the moblilty, on-to-off ratio, threshold voltage, and subthreshold slope from 3.55 to 6.22 cm2/Vs, 9.16× 106 to 1.93×107, 6.35 to 3.17 V, and 0.88 to 0.53 V/dec, respectively. This was attributed to the slight suppression of oxygen vacancies and suitable control of the carrier concentration in the semiconductor. The bias stability was also improved by a small amount Zr doping.
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Keywords: BIAS STABILITY; DOPING; OXIDE TFTS

Document Type: Research Article

Publication date: April 1, 2016

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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