Organic Light Emitting Diode (OLED) Encapsulation with Low Melting Point Alloy (LMPA)-Epoxy Double Line Structure Using Instantaneous Discharge
We propose a new organic light-emitting diode (OLED) encapsulation method with low melting point alloy (LMPA)-epoxy double line structure. The device for an instantaneous discharge consisted of a high voltage charging and discharging driver (HVCD) system with 4,700 μF capacitors. To generate resistive Joule heat, which is required to produce a phase separation of the LMPA(Sn-58Bi)-epoxy mixture and to give adhesion strength between the two substrates, the auxiliary line pattern consisted of a multilayer with three functional layers. The layers are the heating layer (Mo, indium tin oxide (ITO)), the insulating layer (SiO2, (Pb,Si,B)–O), and the sacrificial layer (Cu). Through experiments, we optimized the materials and dimensions of the layers so as to generate sufficient Joule heat energy without producing a spark. The LMPA(Sn-58Bi)-epoxy mixture was printed on the auxiliary line pattern. Our results show that the ITO/(Pb, Si, B)–O/Cu auxiliary line pattern generated a surface temperature of 187 °C at the line pattern in 7 s compared to 140 s for the continuous power supply system. Moreover, although the line pattern endured a temperature of 187 °C, a point at a distance of 2 mm endured only 49 °C due to the short time duration at the peak temperature. These results suggest that the OLED device is less likely to be thermally damaged during the encapsulation process by using the proposed approach.
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Document Type: Research Article
Publication date: April 1, 2016
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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