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Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.

Publisher: American Scientific Publishers

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Volume 10, Number 3, June 2015

Research Articles

Elaboration of In2O3–ZnO Thin Films for Mid-Infrared Transparent Electrode Applications
pp. 295-300(6)
Authors: Maertens, Alban; Margueron, Samuel; Genty, Fréderic; Kuprenaite, Sabina; Abrutis, Adulfas; Legrani, Ouarda

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Characterization of BaF2 Thin Film Deposited by Thermionic Vacuum Arc
pp. 301-303(3)
Authors: Pat, S.; Çetin, N. E.; Korkmaz, Ş.; Balbağ, M. Z.; Ekem, N.

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Synthesis, Characterization and Optical Properties of CdSe and ZnSe Quantum Dots
pp. 320-326(7)
Authors: Verma, Mahesh; Patidar, D.; Sharma, K. B.; Saxena, N. S.

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An Ultra-Low-Power Low-Voltage Two Stage CMOS Operational Amplifier in 45 nm Technology
pp. 327-332(6)
Authors: Gupta, Pragati; Khandelwal, Saurabh; Akashe, Shyam

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Analysis of Intermediate Band Photovoltaic Solar Cell Based on ZnTe:O
pp. 333-337(5)
Authors: Khelifi, S.; Mazari, H.; Belghachi, A.; Ameur, K.; Benamara, Z.; Mostefaoui, M.; Boudaoud, L.

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Study of Tunable Ternary Layer Photonic Crystal for Terahertz Application
pp. 345-351(7)
Authors: Kumar, Rajeev; Kushwaha, Angad S.; Srivastava, Monika; Srivastava, S. K.

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A Special Section

A Special Section on Nanoelectronics and Noble Energy Materials
pp. 352-354(3)
Authors: Lee, Sang-Kwon; Koh, Jung-Hyuk; Koo, Sang-Mo; Umar, Ahmad

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Research Articles

Temperature-Dependent Thermal Conductivity of Single-Phase Antimony Thin Films: An Experimental and Theoretical Approach
pp. 355-360(6)
Authors: Lee, Won-Yong; Cho, Sang-Hyeok; Park, No-Won; Cho, Nam-Kyu; Lee, Sang-Kwon

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Correlations Between Field-Effect Mobility and Gate Dielectric Materials in Solution-Processed Metal-Oxide Transistors
pp. 361-365(5)
Authors: Kim, Jaekyun; Kang, Jingu; Park, Ho-Hyun; Park, Sung Kyu

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Photo-Activated Indium-Strontium-Zinc-Oxide Thin-Film Transistors Using a Strontium Nitrate Precursor
pp. 366-370(5)
Authors: Lee, Woobin; Lee, Minkyung; Yi, Gyeong Min; Park, Sung Kyu; Kim, Yong-Hoon

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Time Dependent Optical Annealing Effects on Al Doped ZnO Transparent Conducting Oxide Thin Films
pp. 381-385(5)
Authors: Kim, Jinhwan; Lee, Gun-Hyun; Lee, Su-Yong; Oh, Young-Jae; Oh, Seung-Il; Lee, Yun-Chung; Yun, Jun-Sang; Chang, Seung-Wook; Kim, Sung-Jin; Lee, Sang-Kwon; Koh, Jung-Hyuk

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Effect of Sintering Temperature on Electrical and Dielectric Properties of Ni Based BaTiO3 Composite
pp. 386-390(5)
Authors: Saleem, Mohsin; Song, Jae Sung; Kim, Insung; Kim, Min-Soo; Jang, Seok Myoung; Farooq, Umer; Pervez, Syed Atif; Khan, Muhammad Zubair; Jeong, Soon Jong

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Electronic Structures and Seebeck Coefficients of Bi2Te3, Sb2Te3, and (Bi0. 25Sb0. 75)2Te3: A First-Principles Calculation Study
pp. 391-396(6)
Authors: Oh, M. W.; Ryu, B.; Lee, J. E.; Joo, S. J.; Kim, B. S.; Park, S. D.; Min, B. K.; Lee, H. W.

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The Optical and Electrical Characteristics for ZnO/Al/ZnO Multilayer Films Deposited by RF Sputtering
pp. 402-407(6)
Authors: Lee, Bum-Seok; Joo, Young-Hee; Kim, Chang-Il

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Structural and Optical Properties of Zn-Based II–VI Semiconductor Thin Films Deposited by MOCVD
pp. 408-412(5)
Authors: Kim, Yongshin; Yeon, Jeongmi; Lee, Sang-Kwon; Choi, In-Hwan

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Fully Transparent InGaZnO Thin Film Transistors with Ga-Doped ZnO Source/Drain Fabricated at Low Temperature
pp. 429-432(4)
Authors: Kim, Ji-Hong; Jeong, Young-Seok; Koo, Sang-Mo

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