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a-Si:H/c-Si Heterojunction Solar Cell Based on Top-Down Silicon Nanostructures

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The properties of (n)a-Si:H/(p)c-Si heterojunction solar cells based on wet chemically etched silicon nanowires with different architectures are explored. Heterojunction solar cell based on silicon nanostructures were fabricated using silver (Ag) wet assisted chemical etching of bulk p-type silicon wafers of (100) and (111) orientation followed by plasma enhanced chemical vapor deposition of (n)a-Si:H layers. Silicon nanowires obtained with (100) substrate are vertical while for (111) substrate nanowires are 45° inclined. The inclined nanowires demonstrate stronger light trapping effect in comparison with vertically aligned SiNWs, which leads to enhanced external quantum efficiency in comparison with planar. However the solar cell performance is still limited by the recombination losses at the silicon nanowire surface.

Keywords: AMORPHOUS SILICON; HETEROJUNCTION; LIGHT TRAPPING; SILICON NANOWIRES; SOLAR CELL

Document Type: Research Article

Publication date: March 1, 2015

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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