@article {Kondrashov:2013:1555-130X:83,
title = "Chemical Vapor Deposition of Graphene on Nickel from Different Gaseous Atmospheres",
journal = "Journal of Nanoelectronics and Optoelectronics",
parent_itemid = "infobike://asp/jno",
publishercode ="asp",
year = "2013",
volume = "8",
number = "1",
publication date ="2013-01-01T00:00:00",
pages = "83-86",
itemtype = "ARTICLE",
issn = "1555-130X",
eissn = "1555-1318",
url = "https://www.ingentaconnect.com/content/asp/jno/2013/00000008/00000001/art00016",
doi = "doi:10.1166/jno.2013.1446",
keyword = "HYDROGEN, METHANE, ARGON, NICKEL, GRAPHENE, CVD",
author = "Kondrashov, I. I. and Rusakov, P. S. and Rybin, M. G. and Pozharov, A. S. and Obraztsova, E. D.",
abstract = "Graphene is promising for a wide range of applications due to its unique electronic and optical properties. Graphene synthesis methods should be optimized to achieve the desired characteristics of produced material. In our work we used a chemical vapor deposition method in atmosphere
of a mixture of different gases (methane, argon and hydrogen) to obtain a single- or multi-layered graphene films. We have revealed an influence of argon and hydrogen concentration, as well as methane concentration (which is different because it is a carbon-containing gas) on the synthesis
process and on the number of graphene layers containing in the fabricated samples.",
}