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Morphology and Structural Properties of a-Si:H and a-SiC:H Films Controlled in Nanoscale

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Morphology and structure of hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon carbide (a-SiC:H) films were investigated to reveal an influence of the carbon content on the films properties in nanoscale. Thin a-Si:H and a-SiC:H films of different compositions were deposited by plasma enhanced chemical vapor deposition (PECVD) from SiH4 and SiH4 + CH4 gas mixtures. Raman spectroscopy and atomic force microscopy (AFM) were used to analyze the chemical bonds and morphology of the films. It was demonstrated that the carbon introduction in an amorphous network resulted not only in an increase of the optical bandgap of a-Si1–x C x :H films from E g = 1.72 eV at x = 0 to E g = 2.18 eV at x = 0.2, but also it led to a decrease of the effective sizes of nanoroughness on the film surfaces. The Raman scattering spectra verified that the amorphous network of a-SiC:H films even with low carbon content became less ordered at short and intermediate nanoscales.
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Keywords: AMORPHOUS HYDROGENATED SILICON; ATOMIC FORCE MICROSCOPY; HYDROGENATED AMORPHOUS SILICON CARBIDE; OPTICAL GAP; RAMAN SPECTRA

Document Type: Research Article

Publication date: November 1, 2012

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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