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UV Photoresponse of Ag-Doped Multiple ZnO Nanowires

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ZnO nanowires doped with Ag were synthesized on indium-tin-oxide-(ITO)-coated glass substrates at a low temperature of 90 °C using an aqueous-solution method. Nanodevices based on undoped and Ag-doped multiple ZnO nanowires were also successfully fabricated using a method that combined photolithography and electron beam (e-beam) evaporation. The current-voltage (IV) characteristics and photoresponses of the pure and Ag-doped multiple ZnO nanowires were measured under UV illumination (λ = 365 nm). The currents of the 0-, 0.05-, and 0.1-mol%-Ag-doped ZnO nanowires under UV illumination were almost 22, 70, and 200 times higher, respectively, than that in the dark at −10 V. The photoconductivity of the undoped and Ag-doped multiple ZnO nanowire devices increased with the increase of the Ag content in the ZnO nanowires.
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Document Type: Research Article

Publication date: August 1, 2011

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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