Devices based on AlGaN/GaN heterostructures, for example, Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs), have been intensively investigated for applications to high-frequency and high-power areas. Presently, the substrates widely distributed are AlGaN/GaN
on SiC for its high performance in radio frequency (RF) applications, for examples high cutoff frequency (fT
) or high maximum oscillation frequency (f
max), and AlGaN/GaN on Si for its high power performance, for examples high breakdown voltage or high voltage
operation. Chemical vapor deposition (CVD) diamond substrates have a thermal conductivity of 12 W/cm·K, and this is a remarkable point because HEMTs or SBDs on AlGaN/GaN on CVD diamonds are one of the promising alternatives for power and RF applications. In comparison, the thermal conductivity
of AlGaN/GaN on a sapphire substrate is 0.33 W/cm·K while that of AlGaN/GaN on a Si substrate is 1.3 W/cm·K and that of AlGaN/GaN on a SiC substrate is 4.9 W/cm·K. In this work, we fabricated SBDs with a 137 mm Schottky channel length on AlGaN/GaN on Si and also on a CVD
diamond substrate. We also compared the thermal behaviors of these fabricated large scale SBDs on Si and a CVD diamond substrate.
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Schottky Barrier Diode;
Document Type: Research Article
Information and Communications Technology Materials & Components & Research Laboratory, Electronics and Telecommunications Research Institute, 218 Gajeongno, Yuseong-Gu, Daejeon 34129, Korea
August 1, 2021
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