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Thermal Behavior of an AlGaN/GaN-Based Schottky Barrier Diode on Diamond and Silicon Substrates

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Devices based on AlGaN/GaN heterostructures, for example, Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs), have been intensively investigated for applications to high-frequency and high-power areas. Presently, the substrates widely distributed are AlGaN/GaN on SiC for its high performance in radio frequency (RF) applications, for examples high cutoff frequency (fT ) or high maximum oscillation frequency (f max), and AlGaN/GaN on Si for its high power performance, for examples high breakdown voltage or high voltage operation. Chemical vapor deposition (CVD) diamond substrates have a thermal conductivity of 12 W/cm·K, and this is a remarkable point because HEMTs or SBDs on AlGaN/GaN on CVD diamonds are one of the promising alternatives for power and RF applications. In comparison, the thermal conductivity of AlGaN/GaN on a sapphire substrate is 0.33 W/cm·K while that of AlGaN/GaN on a Si substrate is 1.3 W/cm·K and that of AlGaN/GaN on a SiC substrate is 4.9 W/cm·K. In this work, we fabricated SBDs with a 137 mm Schottky channel length on AlGaN/GaN on Si and also on a CVD diamond substrate. We also compared the thermal behaviors of these fabricated large scale SBDs on Si and a CVD diamond substrate.
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Keywords: AlGaN/GaN; CVD Diamond; GaN-on-Diamond; GaN-on-Si; SBD; Schottky Barrier Diode; Temperature; Thermal Behaviors

Document Type: Research Article

Affiliations: Information and Communications Technology Materials & Components & Research Laboratory, Electronics and Telecommunications Research Institute, 218 Gajeongno, Yuseong-Gu, Daejeon 34129, Korea

Publication date: August 1, 2021

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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