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Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors

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We report an experimental characterization of the interface states (D it(E)) by using the subthreshold drain current with optical charge pumping effect in In0.53Ga0.47As metal-oxide-semiconductor fieldeffect transistors (MOSFETs). The interface states are derived from the difference between the dark and photo states of the current–voltage characteristics. We used a sub-bandgap photon (i.e., with the photon energy lower than the bandgap energy, E ph < E g) to optically excite trapped carriers over the bandgap in In0.53Ga0.47As MOSFETs. We combined a gate bias-dependent capacitance model to determine the channel length-independent oxide capacitance. Then, we estimated the channel length-independent interface states in In0.53Ga0.47As MOSFETs having different channel lengths (L ch = 5, 10, and 25 [μm]) for a fixed overlap length (L ov = 5 [μm]).
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Keywords: Ideality Factor; Interface State; MOSFET; Optical Charge Pumping; Overlap Capacitance

Document Type: Research Article

Affiliations: 1: School of Electrical Engineering, Kookmin University, Seoul 02701, Korea 2: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea

Publication date: July 1, 2020

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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