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A Parametric Model for Temperature Dependence of Dielectric Function of AlSb Film

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We present analytic representation of dielectric function (ɛɛ 1 + 2) data from 1.7 to 5.0 eV for the temperature from 300 to 803 K of oxide-free AlSb that are the closest representation to date of the intrinsic bulk dielectric response ɛ of the material. Pseudodielectric functions ‘ɛ’ were measured on a 1.5 ยตm thick film grown on (001) GaAs by molecular beam epitaxy. Data were obtained with the film in situ to avoid surface oxidation artifacts. The dielectric function parametric model and multilayer calculation were performed to obtain pure dielectric function and fundamental bandgap (E0) of the AlSb film. The ɛ spectrum was successfully reconstructed by seven polynomials and a pole, which can be used to determine ɛ for arbitrary temperatures. Our results should be useful for device design based on AlSb.
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Keywords: AlSb Film; Dielectric Function; Dielectric Function Parametric Model; Ellipsometry

Document Type: Research Article

Affiliations: Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea

Publication date: October 1, 2019

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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