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Analysis of Variation and Ferroelectric Layer Thickness on Negative Capacitance Nanowire Field-Effect Transistor

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We investigate the interrelation between some variations and the stability of Negative Capacitance Field-Effect Transistors (NC FETs). When a variation effect is considered, stability issues which are making hysteretic operation should be considered for NC FETs as well. In this paper, to make sure of stability and hysteresis-free operation, a thickness margin of ferroelectric layer is suggested. It is the easiest solution for designing and surest method of vouching for hysteresis-free operation. Although some disadvantages which make subthreshold swing (SS) a bit higher than without a margin on thickness of ferroelectric layer (T FE) can be caused, both still high performance and stable operation can be achieved.
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Keywords: Aspect Ratio (AR) Variation; Ferroelectric Material Parameter Variation; Hysteresis-Free Operation; Nanowire FET; Negative Capacitance FET (NC FET)

Document Type: Research Article

Affiliations: 1: Inter University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea 2: Department of Electronics Engineering, Korea National University of Transportation, Chungju, 380-702, Korea 3: Department of Electronics Engineering, Konkuk University, Seoul 05029, Korea

Publication date: October 1, 2019

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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