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pH Sensing Characteristics of Extended-Gate Field-Effect Transistor with Al2O3 Layer

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A simple and stable pH sensor based on an extended-gate field-effect transistor (EGFET) is demonstrated using electron-beam deposited Al2O3 as a pH sensing layer. The threshold voltage of the EGFET is modulated by different pH values of the buffer solution. A control experiment with a bare Au electrode confirms that the stable pH sensing response with linearity and reproducibility originates from the Al2O3 sensing layer. The minimum area of the pH sensing layer is estimated by considering that the different sizes of the sensing layer are easily modeled with different values of external capacitors connected to the readout transistor. The study verifies that the pH detection accuracy is improved by using the reference electrode with a KCl electrolyte.
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Keywords: Al2O3; Double-Layer Capacitance; Extended Gate; Field-Effect Transistor; pH

Document Type: Research Article

Affiliations: 1: Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea 2: Department of Electrical Engineering, Kwangwoon University, Seoul 01897, Republic of Korea

Publication date: October 1, 2019

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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