Indium Zinc Oxide Thin-Film Transistors with Ultraviolet Post-Annealing Treatment
Ultraviolet treatment (UV) light was performed for indium zinc oxide thin-film transistors (TFTs) for different time so as to study the effects of post-annealing on electrical characteristic of TFTs. Electrical characteristic results proved that the value of high mobility after UV post-annealing process (2 mW/cm2. for 30 s was obviously enhanced, and it had an acceptable on/off ratio, reasonable threshold voltage, and subthreshold swing. Among them, the value of the electronic mobility is 2.41 cm2/Vs, the threshold voltage value is 8.31 V, the on/off current ratio value is 2×2 × 105, and the subthreshold swing value is 1.13 V/dec.
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