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Analytical Study on Junction Temperatures of GaInN and AlGaN Ultraviolet Light Emitting Diodes
Junction temperatures of GaInN and AlGaN UV LEDs are analytically investigated in this paper. GaInN and AlGaN UV LEDs have a wide variety of applications such as lighting, displays, spectrofluometry, photocatalytic processes, and high resolution optics. An analytical method is employed
to analyze the junction temperature variations of GaInN and AlGaN UV LEDs with injection currents. The junction temperature is related to material properties, quantum efficiency, thermal resistance, and series resistance of LEDs. The results of GaInN and AlGaN UV LEDs predicted by this study
agree with these obtained from emission peak shift method and forward voltage method.
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Keywords: GaInN; Junction Temperatures; LED
Document Type: Research Article
Affiliations: 1: Department of Mechanical and Electrical Engineering, Dongguan Polytechnic, Dongguan 523808, Guangdong, China 2: Department of Chinese Medicine, Buddhist Dalin Tzu Chi General Hospital, Chiayi 622, Taiwan, R.O.C 3: Department of Mechanical Engineering, Hwa Hsia University of Technology, Taipei 235, Taiwan, R.O.C
Publication date: 01 August 2019
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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