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Chromium Influenced High Magnetic Moment and Half-Metallic Nature of GaN Nanotube
Density functional theory-based calculations have been performed to analyze the electronic and magnetic properties of chromium doped (6, 0) GaN nanotube. The structural stability of GaN nano-tube has been defined in terms of formation energy, which increases as a function of magnetic
impurity (Cr). The study demonstrates that the direct band gap semiconducting GaN nanotube transforms to half-metallic as a function of Cr introduction to GaN. This half metallic nature with high magnetic moment of Cr doped GaN nanotube can be a key parameter for its use in spintronics applications.
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Keywords: Density Functional Theory; Electronic Bandstructure; GaN; Magnetic Moment; Nanotube; Spintronic
Document Type: Research Article
Affiliations: 1: Advanced Materials Research Laboratory, Atal Bihari Vajpayee-Indian Institute of Information Technology and Management, Gwalior 474010 (M.P.), India 2: Department of Physics, Rustamji Institute of Technology, Tekanpur, Gwalior 475005, Madhya Pradesh, India
Publication date: 01 July 2019
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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