@article {Kwak:2019:1533-4880:2319,
title = "DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure",
journal = "Journal of Nanoscience and Nanotechnology",
parent_itemid = "infobike://asp/jnn",
publishercode ="asp",
year = "2019",
volume = "19",
number = "4",
publication date ="2019-04-01T00:00:00",
pages = "2319-2322",
itemtype = "ARTICLE",
issn = "1533-4880",
eissn = "1533-4899",
url = "https://www.ingentaconnect.com/content/asp/jnn/2019/00000019/00000004/art00064",
doi = "doi:10.1166/jnn.2019.16004",
keyword = "Breakdown Voltage, High-Electron Mobility Transistor (HEMT), Field Plate, GaN",
author = "Kwak, Hyeon-Tak and Jang, Kyu-Won and Kim, Hyun-Jung and Lee, Sang-Heung and Lim, Jong-Won and Kim, Hyun-Seok",
abstract = "We investigate DC characteristics of AlGaN/GaN high-electron mobility transistors by using a source-bridged field plate and additional bottom plate (BP) structure. The analysis of experimental data was performed with a two-dimensional simulator. Source connected BP structure stabilized
threshold voltage and transconductance regardless of various drain voltages. The effect of BP location was also analyzed, which had optimal DC values because of the dependence of breakdown voltage and drain current of the device on BP position between gate and drain. Finally, the optimum distance
of 0.8 m from drain side gate head edge to BP was achieved for optimum DC characteristics and the highest breakdown voltage of 341 V.",
}