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DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure

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We investigate DC characteristics of AlGaN/GaN high-electron mobility transistors by using a source-bridged field plate and additional bottom plate (BP) structure. The analysis of experimental data was performed with a two-dimensional simulator. Source connected BP structure stabilized threshold voltage and transconductance regardless of various drain voltages. The effect of BP location was also analyzed, which had optimal DC values because of the dependence of breakdown voltage and drain current of the device on BP position between gate and drain. Finally, the optimum distance of 0.8 μm from drain side gate head edge to BP was achieved for optimum DC characteristics and the highest breakdown voltage of 341 V.

Keywords: Breakdown Voltage; Field Plate; GaN; High-Electron Mobility Transistor (HEMT)

Document Type: Research Article

Affiliations: 1: Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, South Korea 2: Electronics and Telecommunications Research Institute, Daejeon 34129, South Korea

Publication date: April 1, 2019

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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