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Controlled Growth of InAs/GaAs Nanostructures by Droplet Epitaxy

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In(Ga)As low-dimensional structures have wide applications from lasers to single photon emitters. Here, we demonstrate the controlled growth of InAs dots and rings on GaAs (100) by the droplet molecular beam epitaxy. At high temperature the InAs large dots with low density are formed by the crystallization of the low density indium droplets. The optical quality of the dots is improved because of the high temperature growth. While for low temperature growth, the morphology is governed by the interplay between the migration of surface indium adatoms and their crystallization that occurs inside and at the edge of the droplets. The high density InAs small dots are formed spontaneously by relaxing the mismatch strain. The discovery ameliorates In(Ga)As nanostructures for various applications by optimizing the growth conditions during droplet molecular beam epitaxy.

Keywords: Droplet Molecular Beam Epitaxy; InAs/GaAs Nanostructures

Document Type: Research Article

Affiliations: King Abdullah University of Science and Technology (KAUST), Computer, Electrical, and Mathematical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia

Publication date: November 1, 2018

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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