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Temperature Dependence of the Dielectric Response and Critical Point Energies of Bi1.85Gd0.15Te3

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The complex dielectric function and band-edge critical point structures of Bi1.85Gd0.15Te3 are reported for temperatures from 28 to 300 K and energies from 0.74 to 6 eV, obtained on bulk Bi1.85Gd0.15Te3 by rotating-compensator spectroscopic ellipsometry. The critical point (CP) energies are determined using numerically calculated second energy derivatives of the data. At low temperature, eight CP structures are identified, while only four CPs are observed at room temperature. As temperature decreases, we also observe blue shifts and significantly enhanced CP structures relative to those obtained at room temperature. The temperature dependence of the CPs are determined by fitting the data to the temperature coefficient and a phenomenological expression that contains the Bose-Einstein statistical factor.
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Keywords: Bi1.85Gd0.15Te3; Ellipsometry; Optical Properties; Temperature Dependence

Document Type: Research Article

Affiliations: 1: Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea 2: Department of Physics, Sogang University, Seoul 04107, Republic of Korea

Publication date: September 1, 2018

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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