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Carrier Transport Mechanism via a High-k HfO2 Thin Layer Between GaAs Layers

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Carrier transport mechanisms via a high-k gate dielectric material of hafnium dioxide (HfO2) between III–V GaAs were investigated by using a non-equilibrium Green’s function (NEGF). The full band structure for the HfO2 layer was determined by using a sp 3d5 s* closest neighbor empirical tight-binding model. The band structure of the GaAs bulk was determined by using an empirical tight-binding model. The tunneling currents dependent on the thickness of the HfO2 layer with a GaAs layer were obtained by solving the NEGF in an open boundary condition. The applied voltage to obtain the tunneling currents through the HfO2 layer between the GaAs layers was higher than that for the Si/HfO2/Si structure. This was due to the much smaller energy difference between the conduction band edge (E c) and the Fermi level (E f) of the Si layer than that of the GaAs layer. The GaAs/HfO2/GaAs structure showed an increase in the leakage current in comparison with the Si/HfO2/Si structure.
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Keywords: GaAs; HfO2; Leakage Current; Tight Binding Method; Tunneling Current

Document Type: Research Article

Affiliations: Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, Korea

Publication date: September 1, 2018

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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