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Photodetector Based on Multilayer SnSe2 Field Effect Transistor

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We demonstrate a high-performance photodetector with multilayer tin diselenide (SnSe2) exfoliated from a high-quality crystal which was synthesized by the temperature gradient growth method. This SnSe2 photodetector exhibits high photoresponsivity of 5.11 × 105 A W−1 and high specific detectivity of 2.79 × 1013 Jones under laser irradiation (λ = 450 nm). We also observed a reproducible and stable time-resolved photoresponse to the incident laser beam from this SnSe2 photodetector, which can be used as a promising material for future optoelectronic applications.
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Keywords: Field Effect Transistor; Layered Chalcogenide Material; Photodetector; SnSe2; Temperature Gradient Growth

Document Type: Research Article

Affiliations: 1: College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea 2: Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 44610, Korea 3: ICT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon 34129, Korea

Publication date: June 1, 2018

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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