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Effects of Line-Edge Roughness on Extreme Ultraviolet Lithography CDs and Fin-Field-Effect-Transistor Performance for Below 10-nm Patterns

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As the critical dimension (CD) of electronic devices continues to be scaled down to less than 10-nm in size, the line-edge roughness (LER) becomes a critical issue that significantly affects the CD, as well as the device performance because the LER does not scale along with the feature size. Therefore, the LER needs to be reduced to continue to shrink the feature size as well as minimize the device malfunctions. In this study, the LER impacts on the CD formation with the extreme ultraviolet lithography (EUVL) and the performance of fin-field-effect-transistors (FinFETs) is investigated using the EUVL model and a compact device method. The LER modeling is conducted using the Monte Carlo method, by describing the stochastic fluctuation of the exposure due to the photon shot noise and resist blur using a three-dimensional (3D) model. The fluctuation of the electric potentials due to the fin-width roughness (FWR), the electric potentials with fat-fin, thin-fin, big-source, and big-drain FWRs are right shifted, left shifted, down shifted, and upper shifted to the electric potential without FWR, respectively. The fluctuation of the drain currents due to gate voltages are right shifted in order of the drain currents with fat-fin, big-source, and big-drain FWRs. According to the Taguchi method, the gate voltage and channel length are more dominant for the sensitivity of the electronic potential and current drain of the FinFET device.
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Keywords: EUV; FinFET; LER; Line Edge Roughness; Lithography; Lithography Simulation

Document Type: Research Article

Affiliations: Department of Science, Hongik University, Seoul 121-791, Korea

Publication date: November 1, 2017

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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