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Morphological and Fractal Analysis of Thin Ge Films Deposited by Nanosecond Pulsed Laser Ablation

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We studied the formation and growth of thin Ge films deposited by pulsed laser ablation of a Ge target onto Si substrate at room temperature in helium protective atmosphere. 4 nsec long laser pulses at 1064 nm were applied at different pulse numbers. The morphology of the process was followed by atomic force microscopy (AFM) and grazing incidence small angle X-ray scattering (GISAXS), starting from isolated particles deposition to their coalescence into film and further film growth. The analysis in the real space gives a good description of the process, however, due to a large variation in the morphology, and thus the data, the resulting information may not be so clear. We have shown that fractal analysis provides additional insight into the process. Comparing the two techniques AFM and GISAXS the latter one is much more precise since it has a more precise probing length.
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Keywords: Atomic Force Microscopy; Fractals; Ge; Pulsed Laser Deposition; Small Angle X-ray Scattering; Thin Films

Document Type: Research Article

Affiliations: 1: Ruđer Bošković Institute, Bijenička 54, 10000 Zagreb, Croatia 2: Institute of Physics, Bijenička 46, 10000 Zagreb, Croatia 3: Elettra-Sincrotrone Trieste, SS 14 km 163.5, 34149 Basovizza (TS), Italy

Publication date: June 1, 2017

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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