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Home / Journal of Nanoscience and Nanotechnology, Volume 17, Number 5

Effects of Er-Doping on Amorphous InZnSnO/InZnSnO:Er Double-Channel Thin-Film Transistors

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We study the effects of Er-doping on the electrical performances and stabilities of amorphous InZnSnO(IZTO)/IZTO:Er double-channel thin-film transistors (TFTs). Compared to conventional IZTO single-channel TFTs, the IZTO(front)/IZTO:Er(back) double-channel TFTs exhibits higher field-effect mobility and improved stability under both positive and negative bias stresses. From the X-ray photoelectron spectroscopy for the double channel, we observe that Er doping contributes to an enhancement of the oxygen bonding and a reduction of oxygen vacancies in the IZTO thin-film. These results show that the Er can be an effective carrier suppressor in IZTO-based TFTs.

Keywords: Doped Er; Mobility; Stability; a-IZTO TFT

Document Type: Research Article

Affiliations: 1: School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea 2: Electronics and Telecommunications Research Institute, Daejeon 34129, Korea

Publication date: May 1, 2017

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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