
Hole Injection in N-Type Organic Semiconductors by Tuning Metal Work Function with Functional Self-Assembled Monolayers
We describe hole-injection enhancement in N-type organic semiconductors by tuning the work function of the metal electrode with a functional self-assembled monolayer. The increase in the work function after the treatment of the Ag electrode with pentafluorobenzenethiol (PFBT)
lowered the hole-injection barrier significantly. Further, the maximum current of a planar diode with the PFBT-treated Ag electrode was two times higher than that of a diode with a pristine Ag electrode. Finally, the turn-on voltage for the device with the PFBT-treated Ag electrode was 4 V
whereas it was 27 V for the device with the pristine Ag electrode.
Keywords: Hole Injection; N-Type Organic Semiconductors; Organic Diode; Self-Assembled Monolayers; Work Function Tuning
Document Type: Research Article
Affiliations: 1: School of Electronics Engineering, Kyungpook National University, 1370 Sankyuk-dong, Bukgu, Daegu 702-701, Korea 2: Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-742, Korea 3: Construction Equipment Technology Center, Korea Institute of Industrial Technology (KITECH), 13-13, Hayang-ro, Gyeongsan, 712-702, Korea
Publication date: May 1, 2017
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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