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Charge Storage Capabilities of (a/nc) Si Embedded in SiO x Matrix and the Influence of Tunneling Layer Thickness of SiO2/(a/nc)Si–SiO x /SiO x N y Stack on the Memory Performances of MIS Structure

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Silicon with various forms (amorphous or nano crystalline (a/nc)) confined in SiO x system is a good charge storage candidate for memory applications. The metal-insulator-semiconductor (MIS) structure devices fabricated using SiO2/(a/nc) Si–SiO x /SiO x N y (OO x O n ) structure were investigated with SiO x N y tunneling thicknesses changing from 2.6 to 3.2 nm and the crystallinity level of Si embedded in SiO x system varied from 28.07 to 45.81%. The nanocrystals Si confined in SiOx system act as the “quasi quantum well-like,” which restrains the trapped charge within the storage layer. Retention properties were improved with increasing tunneling thickness and the changing in operation voltages was found. By employing the SiO x N y tunneling layer thicker than 2.6 nm, MIS characteristics showed a retention exceeding 97% of the threshold voltage shift after 104 s, and greater than 73% after 10 yrs. Depending on the tunneling thickness, operating voltages varied from ±10 to ±12 V. These operating properties of the OO x O n structure make it be a potential competitor among the new generation of memory structures on glass.
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Keywords: (a/nc) Si Embedded in SiOx Matrix; Charge Storage Layer; SiO2/(a/nc) Si–SiOx/SiOxNy (OOxOn) Multi Stack

Document Type: Research Article

Affiliations: 1: Information and Communication Device Laboratory, School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, 440-746, Korea 2: Energy and Nano Photovoltaic Laboratory, School of Electronic Electrical Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, 440-746, Korea

Publication date: 01 May 2017

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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