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Improvement of Epitaxial GaN Films Grown on Patterned Sapphire Substrate by Growth Mode Control

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Epitaxial GaN films were grown via metal-organic chemical vapor deposition (MO-CVD) on a cone-shaped patterned sapphire substrate (PSS). A 25 nm thick AlN was deposited by ex-situ sputtering as a buffer layer. The GaN films were grown under various conditions by controlling the substrate temperature (1020–1100 °C) and working pressure (85–300 Torr). GaN films grown on PSS via the conventional two-step growth mode consisting of vertical (three-dimensional; 3D) growth and horizontal (two-dimensional; 2D) growth contained poly-grains on top of the cone-shaped pattern. The growth of multi-directional poly-grains on top of the cone-shaped pattern generated numerous defects even though the GaN films were grown by the epitaxial lateral overgrowth (ELO) process. In this paper, we introduce an effective method to control the growth mode of GaN on PSS during the ELO process. The GaN films grown on PSS via the optimized growth mode control showed improvement of crystal quality and surface roughness. The surface morphology and roughness of the GaN films were investigated by field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) in non-contact mode, respectively. The crystal quality of the GaN films was evaluated by ω–2 high-resolution X-ray diffraction (HR-XRD) and the cathodoluminescence (CL) was measured in the 300–800 nm wavelength range to confirm the distribution of threading dislocations.
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Keywords: Epitaxial Lateral Overgrowth; Gallium Nitride; Metal-Organic Chemical Vapor Deposition; Patterned Sapphire Substrate; Thin Film

Document Type: Research Article

Affiliations: 1: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea 2: Quality Planning Team, Quality Management Division, LG Innotek, Seoul 04637, Korea

Publication date: 01 November 2016

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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