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Effect of a Graphene Interlayer on the Electrical Properties of an AlGaN/GaN Schottky Diode

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We report a simple method for fabricating AlGaN/GaN Schottky barrier diodes (SBDs) that include a graphene layer inserted between the AlGaN and Ni/Au metal layers. The insertion of a graphene interlayer between the Ni/Au metal pads and AlGaN layer produces a contact with ohmic characteristics. Ohmic and Schottky contacts were achieved by depositing graphene/Ni/Au and Ni/Au, respectively, on the AlGaN surface of SBD. The ohmic contacts formed using graphene/Ni/Au displayed a specific contact resistance of 0.23 Ω·cm2. The optimum annealing temperature for improving device performance was found to be 500 °C. The graphene/metal electrode system suggested herein is promising for improving the electrical characteristics of AlGaN/GaN-based optoelectronic devices.

Keywords: AlGaN/GaN; Graphene; Graphene/Ni/Au; Ohmic Contact; Schottky Contact; Schottky Diode

Document Type: Research Article

Affiliations: 1: Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Republic of Korea 2: System LSI Manufacturing Operation Center, Samsung Electronics, Giheung, 17113, Republic of Korea

Publication date: October 1, 2016

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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