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High Performance Organic Field-Effect Transistor with Low-Temperature Processed diF-TESADT Large Crystal for Flexible Electronics

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Here, we report high performance organic field-effect transistors (OFETs) with 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT): poly(triarylamine) (PTAA) blend by achieving high and uniform crystallinity over a large area. OFETs with blended semiconductors show high charge carrier mobility (hole mobility ∼4.6 cm2/V.s) under highly blended conditions at a bending radius = 7.5 mm by both a slow drying of a solvent that can form into large-sized crystals (width: ∼500 um, length: ∼1000 um) and blending with PTAA that provides high flexibility.
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Keywords: Organic Semiconductor; Small Molecule; Solution Process; Thin-Film Transistor

Document Type: Research Article

Affiliations: Department of Energy and Materials Engineering, Dongguk University, 26 Pil-Dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea

Publication date: August 1, 2016

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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