High Performance Organic Field-Effect Transistor with Low-Temperature Processed diF-TESADT Large Crystal for Flexible Electronics
Here, we report high performance organic field-effect transistors (OFETs) with 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT): poly(triarylamine) (PTAA) blend by achieving high and uniform crystallinity over a large area. OFETs with blended semiconductors show high charge carrier mobility (hole mobility ∼4.6 cm2/V.s) under highly blended conditions at a bending radius = 7.5 mm by both a slow drying of a solvent that can form into large-sized crystals (width: ∼500 um, length: ∼1000 um) and blending with PTAA that provides high flexibility.
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Document Type: Research Article
Affiliations: Department of Energy and Materials Engineering, Dongguk University, 26 Pil-Dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea
Publication date: August 1, 2016
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