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Two-Dimensional Layered Semiconductor Tungsten Disulfide and Molybdenum-Tungsten Disulfide: Synthesis, Materials Properties and Electronic Structure

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Atomically thin two-dimensional tungsten disulfide layers have been synthesized on silicon dioxide substrates via chemical vapor deposition with the assistance of hydrothermally synthesized tungsten trioxide seeds. This seed-assisted chemical vapor deposition approach allows production of highly crystalline semiconductor tungsten disulfide layers with a band gap of 1.94 eV in monolayer form. Photoluminescence spectroscopy measurements in conjunction with ab-initio density functional theory calculations show that bulk tungsten disulfide undergoes a transition from an indirect band gap to a direct one in monolayer limit. We have also synthesized heterogeneous systems of molybdenum disulfide and tungsten disulfide and characterized the layers by Raman and Photoluminescence spectroscopy measurements. The density functional theory calculations verify the modification of the band gap by changing the composition of molybdenum and tungsten in molybdenum-tungsten disulfide heterogeneous layers, pointing to creating a range of band gap values by alloying two-dimensional semiconductors.

Keywords: Chemical Vapor Deposition; Density Functional Theory; Layered Semiconductors; Molybdenum Disulfide; Molybdenum-Tungsten Disulfide; Transition-Metal Dichalcogenides; Tungsten Disulfide; Two-dimensional Materials

Document Type: Research Article

Affiliations: 1: Materials Science and Engineering Program, University of California, Riverside, CA 92521, USA 2: Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521, USA 3: Department of Mechanical Engineering, University of California, Riverside, CA 92521, USA

Publication date: August 1, 2016

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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