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Integration of Flexible and Microscale Organic Nonvolatile Resistive Memory Devices Using Orthogonal Photolithography

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We present the integration of flexible and microscale organic nonvolatile resistive memory devices fabricated in a cross-bar array structure on plastic substrates. This microscale integration was made via orthogonal photolithography method using fluorinated photoresist and solvents and was achieved without causing damage to the underlying organic memory materials. Our flexible microscale organic devices exhibited high ON/OFF ratio (I ON /I OFF > 104) under bending conditions. In addition, the ON and OFF states of our flexible and microscale memory devices were maintained for 10,000 seconds without any serious degradation.
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Keywords: Cross-Bar Architecture; Microlithography; Nonvolatile Resistive Memory; Organic Electronics; Organic Memory

Document Type: Research Article

Affiliations: 1: Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747, Korea 2: Department of Polymer Science and Engineering, Inha University, Incheon 402-751, Korea

Publication date: June 1, 2016

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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