Electrical Characteristics of Horizontally and Vertically Oriented Few-Layer Graphene on Si-Based Dielectrics
Horizontally and vertically oriented few-layer graphenes have been synthesized directly on SiO2 coated Si substrates via thermal and hot-filament chemical vapor deposition, respectively. The effect of the direction of mass flow on the fabrication of graphene film is analysed
and a plausible mechanism is proposed. The graphene/p-Si heterojunction is fabricated and tested for its potential in optoelectronic devices. Rectification behaviour is observed at the interface of graphene/p-Si under dark conditions. A dark current of 1.1 mA with an ideality factor of 1.5,
in addition of a high rectification ratio of 15.99 at ±0.5 V is found for the vertically oriented graphene/p-Si heterojunction.
Keywords: Atomic Force Microscopy; Defects; Heterojunction; Nanostructures; Raman Spectroscopy; Vapor Deposition
Document Type: Research Article
Affiliations: 1: Solar Energy Research Wing, Gujarat Energy Research and Management Institute-Research, Innovation and Incubation Centre, Gandhinagar 382007, Gujarat, India 2: Department of Mechanical Engineering, University of Saskatchewan, Saskatoon S7N5A9, SK, Canada 3: Plasma Physics Laboratory, Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon S7N5E2, SK, Canada 4: School of Solar Energy, Pandit Deendayal Petroleum University, Gandhinagar 382007, Gujarat, India
Publication date: June 1, 2016
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