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Thermally Induced Tensile Strain of Epitaxial Ge Layers Grown by a Two-Step e-Beam Evaporation Process on Si Substrates

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We have investigated the thermally induced tensile strain in Ge-on-Si for use in optical sources of interconnection systems. Epitaxial Ge layers were grown using a two-step hetero-epitaxy at low and high temperatures. The as-grown Ge-on-Si was then annealed for direct bandgap conversion. A tensile strain of 0.06% in the as-grown Ge increased to 0.31% after annealing at 850 °C. As the thermal budget of this post-growth anneal was increased, the tensile strain of relaxed Ge-on-Si also increases and a Si–Ge alloy forms. Physical characterization indicates a tunable tensile stain in Ge-on-Si can be realized using post-growth annealing, which will allow for a wide range of frequencies in optical interconnections.
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Keywords: Ge-on-Si; Hetero-Epitaxy; Optical Interconnection; Raman Shift

Document Type: Research Article

Affiliations: 1: School of Integrated Technology, Yonsei Institute of Convergence Technology, Yonsei University, Incheon 21983, Korea 2: Spin Convergence Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea 3: Department of Physics and KI for the Nano Century, KAIST, Daejeon, 34141, Korea

Publication date: 01 May 2016

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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