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Prediction of Electric Field Effects on Defect-Free Self-Assembled Nano-Patterning of Block Copolymer

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For future semiconductor device scaling, self-assembly, directed self-assembly (DSA) of block copolymers (BCPs), is a promising method with simplified processing conditions; however, critical challenge is defect control for fine pattern. Electric field is a method for the defect control. In this paper, for electric field effects to jog defects, the electric field induced self-assembled patterns is modeled and simulated by using the Monte Carlo method of dielectric polymers, the self-consistentfield theory (SCFT), and the Navier-Stokes equation. Electric field effects are quantified by using defect degree. Defective patterns are forced to undergo a phase transition to lamellar phase under electric field. For the high electric field, the excess free energy for the defect-free state becomes small. Simulation results can help to optimize electric field and process time in terms of defect area.
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Document Type: Research Article

Publication date: March 1, 2016

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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