Prediction of Electric Field Effects on Defect-Free Self-Assembled Nano-Patterning of Block Copolymer

For future semiconductor device scaling, self-assembly, directed self-assembly (DSA) of block copolymers (BCPs), is a promising method with simplified processing conditions; however, critical challenge is defect control for fine pattern. Electric field is a method for the defect control. In this paper, for electric field effects to jog defects, the electric field induced self-assembled patterns is modeled and simulated by using the Monte Carlo method of dielectric polymers, the self-consistentfield theory (SCFT), and the Navier-Stokes equation. Electric field effects are quantified by using defect degree. Defective patterns are forced to undergo a phase transition to lamellar phase under electric field. For the high electric field, the excess free energy for the defect-free state becomes small. Simulation results can help to optimize electric field and process time in terms of defect area.