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Flexible Organic Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer Substrates

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In this study, we fabricated flexible organic thin-film transistors (OTFTs) on a polydimethysiloxane (PDMS) elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and amorphous conjugated polymer poly(9,9- dioctylfuorene-co-bithiophene) (F8T2) as the gate dielectric and semiconducting layer, respectively. All the processes were performed at elastomer-compatible temperatures of below 100 °C. We confirmed the basic properties of the P(VDF-TrFE):PMMA blend film on the PDMS substrate, and the characteristics of the fabricated flexible OTFTs were also evaluated. A subthreshold voltage swing of 2.5 V/decade, an I on/I off ratio greater than 105, field-effect mobility of 1.2×10−3 cm2 V−1 s−1, and a 10−11 A gate leakage current were obtained. These characteristics did not degrade at a bending radius of 1 cm. For the OTFTs, the endurable maximum strain without degradation in the field-effect mobility of the PDMS elastomers was approximately 2%.

Document Type: Research Article

Publication date: October 1, 2015

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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