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Modeling and Simulation of Patterning Diblock Copolymers Through Nanoimprint Lithography

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As the pattern size is cross to virus and molecular sizes, the fabrication cost becomes important. Advantages of the block copolymer lithography (BCPL) through the nanoimprint lithography (NIL) are no diffraction limits, simple and cheap process, and complementary for each of major drawbacks. In this paper, the directed self-assembly lithography of BCP with NIL is successfully modeled and simulated by using the Navier-Stokes equation for the BCP filling process, the multi-thin layer method and the Dill's equation for the UV exposure process, and the self-consistent field theory (SCFT) for the self-assemble process. The impact of the simulation parameters on the pattern formation is discussed and analyzed by using the response surface methodology (RSM).
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Document Type: Research Article

Publication date: August 1, 2014

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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