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Ohmic Contacts to N-Face p-GaN Using Ni/Au for the Fabrication of Polarization Inverted Light-Emitting Diodes

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The electrical properties of Ni-based ohmic contacts to N-face p-type GaN were investigated. The specific contact resistance of N-face p-GaN exhibits a linear decrease from 1.01 Ω cm2 to 9.05 × 10−3 Ω cm2 for the as-deposited and the annealed Ni/Au contacts, respectively, with increasing annealing temperature. However, the specific contact resistance could be decreased down to 1.03 × 10−4 Ω cm2 by means of surface treatment using an alcohol-based (NH4)2S solution. The depth profile data measured from the intensity of O1s peak in the X-ray photoemission spectra showed that the alcohol-based (NH4)2S treatment was effective in removing the surface oxide layer of GaN.
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Document Type: Research Article

Publication date: August 1, 2013

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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