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ZnO Piezoelectric Fine Wire Gated Graphene Oxide Field Effect Transistor

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Here we report the fabrication and characteristics of graphene oxide (GO) field effect transistor gated with piezopotential of ZnO fine wires on a flexible substrate. The FET device consists of GO thin film on the bottom and ZnO piezoelectric fine wire (PFW) on the top. In the FET device the GO serves as a carrier transport channel and ZnO PFW acts as a gate. When the substrate is bent, a piezopotential is generated in the ZnO PFW. The piezopotential created by the strain in the ZnO PFW was used to control the carrier transport in the GO channel. This device demonstrates the application of piezoelectric ZnO PFW for creating the gating effect on the semiconducting performance of GO film.

Document Type: Research Article

Publication date: May 1, 2013

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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